Birla Institute of Technology, Mesra
Santashraya Prasad
Assistant Professor, Electronics and Communication Engg
Master of Engineering 		Contact Address
Permanent Address Dr.Santashraya Prasad, S/O Dr. S .A Prasad .Ex-Speaker House-B(Campus),Nayatola, Muzaffarpur, Bihar,842001
Local Address Dr.Santashraya Prasad, Assistant Professor, Department of Electronics and Communication Engineering , Birla Institute of Technology, Mesra, Ranchi,835215
Phone (Office) 08340185216
Phone Residence 9934275802
Email Id s.prashad@bitmesra.ac.in
Joined Institute on : 1-Nov-2008
  Work Experience
 
Teaching : 12 Years

Research : 10 Years

Individual: 8 Years
  Professional Background

Creative and Analytical approach to work. Ph.D in the field of Device modeling and Post Graduate(M.E)  from B.I.T,Mesra. A quick learner and has ability to work on various technologies. Joined B.I.T on 1-11-2008 and is working on faculty position . Have work experience of 2.5 years in Industry ,worked on Microprocessor based companies and embedded system.
  Research Areas
 
  • Nanoscale Device modelling
  Publications
 

 Publication in SCI /SSCI /Scopus  journals 

 

  1. Karthik Reddy, Manisha Guduri, N Lakshmi Dheshik Reddy, Peddi Dharani, Santashraya Prasad, A. Islam, "Threshold Voltage Extraction of 220 nm FDSOI Device Using Linear Extrapolation Method," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-4, Oct. 2016. DOI: 10.17485/ijst/2016/v9i40/99511, Publisher: Indian Society for Education and Environment. http://www.indjst.org/index.php/indjst/article/view/99511.
  2. Shrey Khanna, Debosmit Majumder, Vikash Kumar, Santashraya Prasad, Aminul Islam, "Impact of Temperature Variation on Resonant Frequency of Active Grounded Inductor Based Bandpass Filter,” in Indian Journal of Science and Technology, vol. 9, no. 33, pp. 1-4, Sep. 2016. DOI: 10.17485/ijst/2016/v9i33/99505, Publisher: Indian Society for Education and Environment. http://www.indjst.org/index.php/indjst/article/view/99505.
  3. Santashraya Prasad, Amit Krishna Dwivedi, Aminul Islam, "Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in Terms of Mobility and Subthreshold Slope," in Journal of Computational Electronics, vol. 15, no. 1, pp. 172-180, Mar. 2016, Publisher: Springer US. DOI: 10.1007/s10825-015-0751-8, http://link.springer.com/article/10.1007%2Fs10825-015- 0751-8#/page-1.
  4. Santashraya Prasad and Aminul Islam “Y-shaped double-gate high electron mobility transistor for radio frequency applications”, 2022, ISSN:1753-2507, eISSN:1753-2515, pp181-201, International Journal of NanoparticlesVol. 14, No. 2-4,https://doi.org/10.1504/IJNP.2022.126356.

BOOK Chapter:

  1. Vikash Kumar, Rishab Mehra, Debosmit Majumder, Shrey Khanna, Santashraya Prasad and Aminul Islam, “Process and Voltage Variation-Aware Design and Analysis of Active Grounded Inductor-Based  Bandpass Filter” Progress in Intelligent Computing Techniques: Theory,Practice, and Applications, Advances in Intelligent Systems and Computing,Print ISBN: 978-981-10-3372-8, Online ISBN: 978-981-10-3373-5,vol. 518, pp. 309-315,doi.org/10.1007/978-981-10-3373-5_31 (2016).

Conference Papers:

  1. Conference

  2. J. P. Kotni, M. Pandey, S. Prasad and A. Islam, "Radiation-Hardened Low Read Delay 12T-SRAM Cell for Space Applications," 2021 Devices for Integrated Circuit (DevIC), 19-20 May 2021, pp. 512-516,doi:10.1109/DevIC50843.2021.9455796.https://doi.org/10.1109/DevIC50843.2021.9455796.
  3. S. Singha, A. S. Singh, S. Prasad and A. Alam, "A Study on Power Optimization Techniques in PSoC," 2019 International Conference on Communication and Signal Processing (ICCSP), 2019, pp. 0225-0229, doi: 10.1109/ICCSP.2019.8698070,2019.
  4. Ashish Kumar, Pinki Kumari, Priya Murmu, Santashraya Prasad, A. Islam, "Indium Phosphide based High Electron Mobility Transistor," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 2, pp. 10-13.
  5. Sesha Sree, Rashmi Virupaksha, Rishav Raj, Santashraya Prasad, Manisha Guduri, A. Islam, "Characterization of AlInN and GaN Based HEMT on SiC Using AlN as Interfacial Spacer Layer and Si3N4 Passivation Layer," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 2, pp. 118-123.
  6. Pinki Kumari, Priya Murmu, Ashish Kumar, Shashank Kumar Dubey, Santashraya Prasad and A. Islam, "Influence of AlN spacer layer on SiN-passivated AlGaN/GaN HEMT," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 1, pp. 54-58.
  7. Priya Murmu, Pinki Kumari, Ashish Kumar, Shashank Kumar Dubey, Santashraya Prasad and A. Islam, "Investigation on characteristic properties of AlGaN/GaN HEMT using Sapphire, Si and SiC substrate materials," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 1, pp. 104-108.
  8. S. Prasad, M. Guduri and A. Islam, "High breakdown (958 V) low threshold GaN HEMT," 2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT), Aligarh, 24-26 Nov. 2017, pp. 94-96. doi: 10.1109/MSPCT.2017.8363981. https://doi.org/10.1109/MSPCT.2017.8363981.
  9. N. S. Ranjan, Arko Mukherjee, Harshit Sinha, Santashraya Prasad, Aminul Islam, "Optimal Design of Nonvolatile CAM Cell with Magnetic Tunnel Junction," in 4th International Conference on Microelectronics, Circuits and Systems (Micro2017), Darjeeling, India, 3-4 Jun. 2017, vol. 2, pp. 82-86.
  10. A. Chitransh, S. Moonka, A. Priya, S. Prasad, A. Sengupta and A. Islam, "Analysis of breakdown voltage of a field plated High Electron Mobility Transistor," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 167-169. doi: 10.1109/DEVIC.2017.8073929, https://doi.org/10.1109/DEVIC.2017.8073929.
  11. S. Moonka, A. Priya, A. Chitransh, S. Prasad, A. Sengupta and A. Islam, "Analysis of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs Pseudomorphic HEMT device with higher conductivity," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 360-363. doi: 10.1109/DEVIC.2017.8073969, https://doi.org/10.1109/DEVIC.2017.8073969.
  12. A. Priya, S. Moonka, A. Chitransh, S. Prasad, A. Sengupta and A. Islam, "Development of HEMT device with surface passivation for a low leakage current and steep subthreshold slope," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 364-367. doi: 10.1109/DEVIC.2017.8073970, https://doi.org/10.1109/DEVIC.2017.8073970.
  13. Pallavi Roy, Surbhi Jawanpuria, Vismita, Santashraya Prasad, Aminul Islam, “Characterization of AlGaN and GaN Based HEMT With AlN Interfacial Spacer,” in IEEE International conference on Communication Systems and Network Technologies (CSNT-2015), Gwalior, India, April 4–6, 2015, pp. 786 – 788, DOI: 10.1109/CSNT.2015.103, http://dx.doi.org/10.1109/CSNT.2015.103.
  14. Mohd. Ajmal Kafeel, Mohd. Hasan, Mohd. Shah Alam, A. Kumar, S. Prasad, A. Islam, “Performance evaluation of CNFET based operational amplifier at technology node beyond 45-nm,” in IEEE Annual India Conference (INDICON), IIT, Bombay, India, December 13-15, 2013, pp. 1 – 5. DOI: 10.1109/INDCON.2013.6725973, http://dx.doi.org/10.1109/INDCON.2013.6725973.
  15. A. Kumar, S. Prasad, A. Islam, “Realization and Optimization of CNFET Based Operational Amplifier at 32-nm Technology Node,” in International Conclave 2013," in Innovations in Engineering & Management” (ICIEM 2013), BIT, Patna, India, February 22-23, 2013.
  16. S. Kushwaha, S. Prasad, A. Islam, “Variation Mitigation Technique in SRAM Cell using Adaptive Body Bias,” in IEEE International Conference on Communications, Devices, and Intelligent Systems (CODIS), Jadavpur University, Kolkata, India, December 28-29, 2012, pp. 117 – 120. DOI: 10.1109/CODIS.2012.6422150, http://dx.doi.org/10.1109/CODIS.2012.6422150.